SK Hynix kunngjør HBM2E-minneprodukter, 460 GB / s og 16 GB per stabel


SK Hynix Inc. announced today that it has developed HBM2E DRAM product with the industry's highest bandwidth. The new HBM2E boasts approximately 50% higher bandwidth and 100% additional capacity compared to the previous HBM2. SK Hynix's HBM2E supports over 460 GB (Gigabyte) per second bandwidth based on the 3.6 Gbps (gigabits-per-second) speed performance per pin with 1,024 data I/Os (Inputs/Outputs). Through utilization of the TSV (Through Silicon Via) technology, a maximum of eight 16-gigabit chips are vertically stacked, forming a single, dense package of 16 GB data capacity.

SK Hynixs HBM2E er en optimal minneløsning for den fjerde industrielle epoken, og støtter avanserte GPU, superdatamaskiner, maskinlæring og kunstig intelligenssystemer som krever maksimalt minneytelse. I motsetning til varer fra DRAM-produkter som tar på seg modulpakningsformer og monteres på systembord, er HBM-brikken koblet tett sammen med prosessorer som GPU-er og logikkbrikker, distansert bare noen få μm enheter fra hverandre, noe som muliggjør enda raskere dataoverføring. 'SK Hynix has established its technological leadership since its world's first HBM release in 2013,' said Jun-Hyun Chun, Head of HBM Business Strategy. 'SK Hynix will begin mass production in 2020, when the HBM2E market is expected to open up, and continue to strengthen its leadership in the premium DRAM market.'